BSC200P03LSG
Infineon Technologies
Producto No:
BSC200P03LSG
Fabricante:
Paquete:
PG-TDSON-8-6
Lote:
-
Ficha de datos:
-
Descripción:
P-CHANNEL POWER MOSFET
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 15 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.5A, 10V |
| Supplier Device Package | PG-TDSON-8-6 |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | OptiMOS® |
| Power Dissipation (Max) | 2.5W (Ta), 63W (Tc) |
| Package / Case | 8-PowerTDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 12.5A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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