SPI10N10

Infineon Technologies

Producto No:

SPI10N10

Fabricante:

Paquete:

PG-TO262-3-1

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 100V 10.3A TO262-3

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	426 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Mounting Type	Through Hole
Product Status	Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
Supplier Device Package	PG-TO262-3-1
Vgs(th) (Max) @ Id	4V @ 21µA
Drain to Source Voltage (Vdss)	100 V
Series	SIPMOS®
Power Dissipation (Max)	50W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPI10N