Hogar / 单 FET,MOSFET / IRLML6402TRPBF-1
IRLML6402TRPBF-1
detaildesc

IRLML6402TRPBF-1

Infineon Technologies

Producto No:

IRLML6402TRPBF-1

Paquete:

Micro3™/SOT-23

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 20V 3.7A SOT23

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V
Supplier Device Package Micro3™/SOT-23
Vgs(th) (Max) @ Id 1.2V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series HEXFET®
Power Dissipation (Max) 1.3W (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)