IRFSL23N15D
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IRFSL23N15D

Infineon Technologies

Producto No:

IRFSL23N15D

Paquete:

TO-262

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 150V 23A TO262

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 90mOhm @ 14A, 10V
Supplier Device Package TO-262
Vgs(th) (Max) @ Id 5.5V @ 250µA
Drain to Source Voltage (Vdss) 150 V
Series HEXFET®
Power Dissipation (Max) 3.8W (Ta), 136W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube