IRF7807A
detaildesc

IRF7807A

Infineon Technologies

Producto No:

IRF7807A

Paquete:

8-SO

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 30V 8.3A 8SO

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series HEXFET®
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Tube