IRF7701GTRPBF
detaildesc

IRF7701GTRPBF

Infineon Technologies

Producto No:

IRF7701GTRPBF

Paquete:

8-TSSOP

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 12V 10A 8TSSOP

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V
Supplier Device Package 8-TSSOP
Vgs(th) (Max) @ Id 1.2V @ 250µA
Drain to Source Voltage (Vdss) 12 V
Series HEXFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)