IRF7526D1PBF
detaildesc

IRF7526D1PBF

Infineon Technologies

Producto No:

IRF7526D1PBF

Paquete:

Micro8™

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 30V 2A MICRO8

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 200mOhm @ 1.2A, 10V
Supplier Device Package Micro8™
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series FETKY™
Power Dissipation (Max) 1.25W (Ta)
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube