IRF7233TR
detaildesc

IRF7233TR

Infineon Technologies

Producto No:

IRF7233TR

Paquete:

8-SO

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 12V 9.5A 8SO

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 12 V
Series HEXFET®
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)