IRF7171MTRPBF
detaildesc

IRF7171MTRPBF

Infineon Technologies

Producto No:

IRF7171MTRPBF

Paquete:

DIRECTFET™ MN

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 100V 15A DIRECTFET

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2160 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 6.5mOhm @ 56A, 10V
Supplier Device Package DIRECTFET™ MN
Vgs(th) (Max) @ Id 3.6V @ 150µA
Drain to Source Voltage (Vdss) 100 V
Series FASTIRFET™, HEXFET®
Power Dissipation (Max) 2.8W (Ta), 104W (Tc)
Package / Case DirectFET™ Isometric MN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 93A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)