IRF6603
Infineon Technologies
Producto No:
IRF6603
Fabricante:
Paquete:
DIRECTFET™ MT
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 30V 27A DIRECTFET
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6590 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| Supplier Device Package | DIRECTFET™ MT |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | HEXFET® |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Package / Case | DirectFET™ Isometric MT |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 92A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +20V, -12V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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