IPP80P04P4L08AKSA1
Infineon Technologies
Producto No:
IPP80P04P4L08AKSA1
Fabricante:
Paquete:
PG-TO220-3-1
Lote:
-
Ficha de datos:
Descripción:
MOSFET P-CH 40V 80A TO220-3
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 80A, 10V |
| Supplier Device Package | PG-TO220-3-1 |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA |
| Drain to Source Voltage (Vdss) | 40 V |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Power Dissipation (Max) | 75W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +5V, -16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
| Base Product Number | IPP80P |
Piezas recomendadas
IPP80P04P4L08AKSA1 Blog relacionado
Purchase must see! Electronic component selection from entry to give up
2024-10-24 39
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 96
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 43
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 30
2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
Enlaces rápidos
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号