IPP100P03P3L-04

Infineon Technologies

Producto No:

IPP100P03P3L-04

Fabricante:

Paquete:

PG-TO220-3-1

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 30V 100A TO220-3

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	9300 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4.3mOhm @ 80A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	2.1V @ 475µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™
Power Dissipation (Max)	200W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+5V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPP100P