IPP09N03LA
detaildesc

IPP09N03LA

Infineon Technologies

Producto No:

IPP09N03LA

Paquete:

PG-TO220-3

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 25V 50A TO220-3

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1642 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 9.2mOhm @ 30A, 10V
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 2V @ 20µA
Drain to Source Voltage (Vdss) 25 V
Series OptiMOS™
Power Dissipation (Max) 63W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number IPP09N