IPI05CN10N G

Infineon Technologies

Producto No:

IPI05CN10N G

Fabricante:

Paquete:

PG-TO262-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 100V 100A TO262-3

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	181 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.4mOhm @ 100A, 10V
Supplier Device Package	PG-TO262-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI05C