BUZ31 E3046
detaildesc

BUZ31 E3046

Infineon Technologies

Producto No:

BUZ31 E3046

Paquete:

PG-TO262-3

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 200V 14.5A TO262-3

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1120 pF @ 25 V
FET Type N-Channel
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 5V
Supplier Device Package PG-TO262-3
Vgs(th) (Max) @ Id 4V @ 1mA
Drain to Source Voltage (Vdss) 200 V
Series SIPMOS®
Power Dissipation (Max) 95W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)