BSP372L6327HTSA1
detaildesc

BSP372L6327HTSA1

Infineon Technologies

Producto No:

BSP372L6327HTSA1

Paquete:

PG-SOT223-4

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 100V 1.7A SOT223-4

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V
FET Type N-Channel
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 310mOhm @ 1.7A, 5V
Supplier Device Package PG-SOT223-4
Vgs(th) (Max) @ Id 2V @ 1mA
Drain to Source Voltage (Vdss) 100 V
Series SIPMOS®
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±14V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)