2SJ304(F)

Toshiba Semiconductor and Storage

Producto No:

2SJ304(F)

Fabricante:

Paquete:

TO-220NIS

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 60V 14A TO220NIS

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	120mOhm @ 7A, 10V
Supplier Device Package	TO-220NIS
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk
Base Product Number	2SJ304