SSM3J356R,LF

Toshiba Semiconductor and Storage

Producto No:

SSM3J356R,LF

Fabricante:

Paquete:

SOT-23F

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 60V 2A SOT-23F

Cantidad:

Entrega:

Pago:

En stock : 275150

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 1A, 10V
Supplier Device Package	SOT-23F
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSVI
Power Dissipation (Max)	1W (Ta)
Package / Case	SOT-23-3 Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J356