TK14G65W,RQ
detaildesc

TK14G65W,RQ

Toshiba Semiconductor and Storage

Producto No:

TK14G65W,RQ

Paquete:

D2PAK

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 650V 13.7A D2PAK

Cantidad:

Entrega:

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Pago:

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En stock : 3974

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $2.242

    $2.242

  • 10

    $2.014

    $20.14

  • 100

    $1.61861

    $161.861

  • 500

    $1.329867

    $664.9335

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Supplier Device Package D2PAK
Vgs(th) (Max) @ Id 3.5V @ 690µA
Drain to Source Voltage (Vdss) 650 V
Series DTMOSIV
Power Dissipation (Max) 130W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK14G65