TSM110NB04LDCR
detaildesc

TSM110NB04LDCR

Taiwan Semiconductor Corporation

Produkt-Nr.:

TSM110NB04LDCR

Paket:

8-PDFN (5x6)

Charge:

-

Datenblatt:

pdf

Beschreibung:

40V, 48A, DUAL N-CHANNEL POWER

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1269pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Supplier Device Package 8-PDFN (5x6)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta), 48W (Tc)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 48A (Tc)
Mfr Taiwan Semiconductor Corporation
Package Tape & Reel (TR)
Base Product Number TSM110