TPC8062-H,LQ(CM
Toshiba Semiconductor and Storage
Produkt-Nr.:
TPC8062-H,LQ(CM
Hersteller:
Paket:
8-SOP
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 30V 18A 8SOP
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 9A, 10V |
| Supplier Device Package | 8-SOP |
| Vgs(th) (Max) @ Id | 2.3V @ 300µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | U-MOSVII-H |
| Power Dissipation (Max) | 1W (Ta) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | TPC8062 |
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