TP5335MF-G-VAO
detaildesc

TP5335MF-G-VAO

Microchip Technology

Produkt-Nr.:

TP5335MF-G-VAO

Paket:

6-DFN (2x2)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET, P-CHANNEL ENHANCEMENT-MO

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V
FET Type P-Channel
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 30Ohm @ 200mA, 10V
Supplier Device Package 6-DFN (2x2)
Vgs(th) (Max) @ Id 2.4V @ 1mA
Drain to Source Voltage (Vdss) 350 V
Series Automotive, AEC-Q100
Power Dissipation (Max) 360mW (Ta)
Package / Case 6-VDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 85mA (Tj)
Mfr Microchip Technology
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TP5335