TO252MDD4N65DS
detaildesc

TO252MDD4N65DS

NextGen Components

Produkt-Nr.:

TO252MDD4N65DS

Hersteller:

NextGen Components

Paket:

-

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET TO-252 N 650V 4A

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Drain to Source Voltage (Vdss) 650 V
Series TO-252
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr NextGen Components
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Product Status Active
Rds On (Max) @ Id, Vgs 2.8Ohm @ 2A, 10V