TK16A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
Produkt-Nr.:
TK16A55D(STA4,Q,M)
Hersteller:
Paket:
TO-220SIS
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 550V 16A TO220SIS
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 8A, 10V |
| Supplier Device Package | TO-220SIS |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain to Source Voltage (Vdss) | 550 V |
| Series | π-MOSVII |
| Power Dissipation (Max) | - |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| Base Product Number | TK16A55 |
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