SSM6K204FE,LF
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SSM6K204FE,LF

Toshiba Semiconductor and Storage

Produkt-Nr.:

SSM6K204FE,LF

Paket:

ES6

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 20V 2A ES6

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 126mOhm @ 1A, 4V
Supplier Device Package ES6
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 500mW (Ta)
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Package Tape & Reel (TR)
Base Product Number SSM6K204