SSM3K316T(TE85L,F)
Toshiba Semiconductor and Storage
Produkt-Nr.:
SSM3K316T(TE85L,F)
Hersteller:
Paket:
TSM
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 30V 4A TSM
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 4 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 3A, 10V |
| Supplier Device Package | TSM |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SSM3K316 |
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