S2M0025120D
SMC Diode Solutions
Produkt-Nr.:
S2M0025120D
Hersteller:
Paket:
TO-247AD
Charge:
-
Datenblatt:
Beschreibung:
MOSFET SILICON CARBIDE SIC 1200V
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4402 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Supplier Device Package | TO-247AD |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 446W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tj) |
| Mfr | SMC Diode Solutions |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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