RN1906(T5L,F,T)
Toshiba Semiconductor and Storage
Produkt-Nr.:
RN1906(T5L,F,T)
Hersteller:
Paket:
US6
Charge:
-
Datenblatt:
Beschreibung:
TRANS 2NPN PREBIAS 0.2W US6
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Resistor - Base (R1) | 4.7kOhms |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | US6 |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max | 200mW |
| Mfr | Toshiba Semiconductor and Storage |
| Resistor - Emitter Base (R2) | 47kOhms |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Base Product Number | RN1906 |
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