QJD1210011
Powerex Inc.
Produkt-Nr.:
QJD1210011
Hersteller:
Paket:
Module
Charge:
-
Datenblatt:
Beschreibung:
MOSFET 2N-CH 1200V 100A SIC
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 100A, 20V |
| Supplier Device Package | Module |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 900W |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Mfr | Powerex Inc. |
| Package | Bulk |
| Base Product Number | QJD1210 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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