PSMN4R0-30YL,115
detaildesc

PSMN4R0-30YL,115

Nexperia USA Inc.

Produkt-Nr.:

PSMN4R0-30YL,115

Hersteller:

Nexperia USA Inc.

Paket:

LFPAK56, Power-SO8

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 100A LFPAK56

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36.6 nC @ 10 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 4mOhm @ 15A, 10V
Supplier Device Package LFPAK56, Power-SO8
Vgs(th) (Max) @ Id 2.15V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 69W (Tc)
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Nexperia USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PSMN4R0