PMZB370UNE,315
detaildesc

PMZB370UNE,315

Nexperia USA Inc.

Produkt-Nr.:

PMZB370UNE,315

Hersteller:

Nexperia USA Inc.

Paket:

DFN1006B-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 900MA DFN1006B-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 78 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.16 nC @ 15 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 490mOhm @ 500mA, 4.5V
Supplier Device Package DFN1006B-3
Vgs(th) (Max) @ Id 1.05V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
Package / Case 3-XFDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 900mA (Ta)
Mfr Nexperia USA Inc.
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)