PMPB11R2VPX
Nexperia USA Inc.
Produkt-Nr.:
PMPB11R2VPX
Hersteller:
Paket:
DFN2020MD-6
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 12V 9.7A DFN2020M-6
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2230 pF @ 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.7A, 4.5V |
| Supplier Device Package | DFN2020MD-6 |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain to Source Voltage (Vdss) | 12 V |
| Series | TrenchMOS™ |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Package / Case | 6-UDFN Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Mfr | Nexperia USA Inc. |
| Vgs (Max) | ±8V |
| Package | Tape & Reel (TR) |
| Base Product Number | PMPB11 |
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15,000 ㎡Lager auf Lager
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