PMK35EP,518
detaildesc

PMK35EP,518

Nexperia USA Inc.

Produkt-Nr.:

PMK35EP,518

Hersteller:

Nexperia USA Inc.

Paket:

8-SO

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 30V 14.9A 8SO

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 19mOhm @ 9.2A, 10V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchMOS™
Power Dissipation (Max) 6.9W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14.9A (Tc)
Mfr Nexperia USA Inc.
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)