PJP4NA50A_T0_00001
detaildesc

PJP4NA50A_T0_00001

Panjit International Inc.

Produkt-Nr.:

PJP4NA50A_T0_00001

Paket:

TO-220AB

Charge:

-

Datenblatt:

pdf

Beschreibung:

500V N-CHANNEL MOSFET

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 449 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series -
Power Dissipation (Max) 90W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr Panjit International Inc.
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number PJP4