Zuhause / Single FETs, MOSFETs / PJD40N04-AU_L2_000A1
PJD40N04-AU_L2_000A1
detaildesc

PJD40N04-AU_L2_000A1

Panjit International Inc.

Produkt-Nr.:

PJD40N04-AU_L2_000A1

Paket:

TO-252

Charge:

-

Datenblatt:

pdf

Beschreibung:

40V N-CHANNEL ENHANCEMENT MODE M

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 2965

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.7315

    $0.7315

  • 10

    $0.62985

    $6.2985

  • 100

    $0.436145

    $43.6145

  • 500

    $0.36442

    $182.21

  • 1000

    $0.310137

    $310.137

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V
Supplier Device Package TO-252
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 2.4W (Ta), 43.2W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Tc)
Mfr Panjit International Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD40