PHD71NQ03LT,118
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PHD71NQ03LT,118

NXP Semiconductors

Produkt-Nr.:

PHD71NQ03LT,118

Hersteller:

NXP Semiconductors

Paket:

DPAK

Charge:

-

Datenblatt:

pdf

Beschreibung:

NEXPERIA PHD71NQ03LT - TRANSISTO

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13.2 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Supplier Device Package DPAK
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series TrenchMOS™
Power Dissipation (Max) 120W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Mfr NXP Semiconductors
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk