Zuhause / IGBT Modules / NXH200T120H3Q2F2STNG
NXH200T120H3Q2F2STNG
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NXH200T120H3Q2F2STNG

onsemi

Produkt-Nr.:

NXH200T120H3Q2F2STNG

Hersteller:

onsemi

Paket:

56-PIM/Q2PACK (93x47)

Charge:

-

Datenblatt:

pdf

Beschreibung:

80KW GEN-II Q2PACK-200A MODULE W

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 175°C (TJ)
NTC Thermistor No
Configuration Half Bridge
Current - Collector (Ic) (Max) 330 A
Input Capacitance (Cies) @ Vce 35.615 nF @ 25 V
Mounting Type Chassis Mount
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 650 V
Supplier Device Package 56-PIM/Q2PACK (93x47)
Series -
Input Standard
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A
Package / Case Module
Power - Max 679 W
Mfr onsemi
Current - Collector Cutoff (Max) 500 µA
Package Tray
IGBT Type Trench Field Stop