NSB8JTHE3/81
Vishay General Semiconductor - Diodes Division
Produkt-Nr.:
NSB8JTHE3/81
Hersteller:
Paket:
TO-263AB (D²PAK)
Charge:
-
Datenblatt:
Beschreibung:
DIODE GEN PURP 600V 8A TO263AB
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at Digi-Key |
| Supplier Device Package | TO-263AB (D²PAK) |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Series | Automotive, AEC-Q101 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | NSB8 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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