MBR500100CTR
detaildesc

MBR500100CTR

GeneSiC Semiconductor

Produkt-Nr.:

MBR500100CTR

Paket:

Twin Tower

Charge:

-

Datenblatt:

pdf

Beschreibung:

DIODE MODULE 100V 250A 2TOWER

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Speed Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type Chassis Mount
Product Status Obsolete
Supplier Device Package Twin Tower
Current - Reverse Leakage @ Vr 1 mA @ 20 V
Series -
Package / Case Twin Tower
Technology Schottky, Reverse Polarity
Voltage - Forward (Vf) (Max) @ If 880 mV @ 250 A
Diode Configuration 1 Pair Common Anode
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 100 V
Package Bulk
Current - Average Rectified (Io) (per Diode) 250A
Operating Temperature - Junction -55°C ~ 150°C