JANTXV2N6798U
detaildesc

JANTXV2N6798U

Microsemi Corporation

Produkt-Nr.:

JANTXV2N6798U

Paket:

18-ULCC (9.14x7.49)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 200V 5.5A 18ULCC

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42.07 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 420mOhm @ 5.5A, 10V
Supplier Device Package 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 200 V
Series Military, MIL-PRF-19500/557
Power Dissipation (Max) 800mW (Ta), 25W (Tc)
Package / Case 18-CLCC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Mfr Microsemi Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk