IXTU01N100
detaildesc

IXTU01N100

IXYS

Produkt-Nr.:

IXTU01N100

Hersteller:

IXYS

Paket:

TO-251AA

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 1000V 100MA TO251

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V
Supplier Device Package TO-251AA
Vgs(th) (Max) @ Id 4.5V @ 25µA
Drain to Source Voltage (Vdss) 1000 V
Series -
Power Dissipation (Max) 25W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100mA (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTU01