IXTT11P50
detaildesc

IXTT11P50

IXYS

Produkt-Nr.:

IXTT11P50

Hersteller:

IXYS

Paket:

TO-268AA

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 500V 11A TO268

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V
Supplier Device Package TO-268AA
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series -
Power Dissipation (Max) 300W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTT11