IXTP3N100D2
IXYS
Produkt-Nr.:
IXTP3N100D2
Hersteller:
Paket:
TO-220-3
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 1000V 3A TO220AB
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 5 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 1.5A, 0V |
| Supplier Device Package | TO-220-3 |
| Vgs(th) (Max) @ Id | - |
| Drain to Source Voltage (Vdss) | 1000 V |
| Series | Depletion |
| Power Dissipation (Max) | 125W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Mfr | IXYS |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Package | Tube |
| Base Product Number | IXTP3 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
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15,000 ㎡Lager auf Lager
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