IXTH6N50D2
detaildesc

IXTH6N50D2

IXYS

Produkt-Nr.:

IXTH6N50D2

Hersteller:

IXYS

Paket:

TO-247 (IXTH)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 500V 6A TO247

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 5 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 0V
Supplier Device Package TO-247 (IXTH)
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 500 V
Series Depletion
Power Dissipation (Max) 300W (Tc)
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) -
Package Tube
Base Product Number IXTH6