IXFX12N90Q
detaildesc

IXFX12N90Q

IXYS

Produkt-Nr.:

IXFX12N90Q

Hersteller:

IXYS

Paket:

PLUS247™-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 900V 12A PLUS247-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V
Supplier Device Package PLUS247™-3
Vgs(th) (Max) @ Id 5.5V @ 4mA
Drain to Source Voltage (Vdss) 900 V
Series HiPerFET™, Q Class
Power Dissipation (Max) 300W (Tc)
Package / Case TO-247-3 Variant
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Box
Base Product Number IXFX12