IXFQ12N80P
IXYS
Produkt-Nr.:
IXFQ12N80P
Hersteller:
Paket:
TO-3P
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 800V 12A TO3P
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 500mA, 10V |
| Supplier Device Package | TO-3P |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Drain to Source Voltage (Vdss) | 800 V |
| Series | HiPerFET™, Polar |
| Power Dissipation (Max) | 360W (Tc) |
| Package / Case | TO-3P-3, SC-65-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Mfr | IXYS |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IXFQ12 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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