IXFN20N120
IXYS
Produkt-Nr.:
IXFN20N120
Hersteller:
Paket:
SOT-227B
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 1200V 20A SOT-227B
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 500mA, 10V |
| Supplier Device Package | SOT-227B |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | HiPerFET™ |
| Power Dissipation (Max) | 780W (Tc) |
| Package / Case | SOT-227-4, miniBLOC |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Mfr | IXYS |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IXFN20 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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