IXFE180N20
detaildesc

IXFE180N20

IXYS

Produkt-Nr.:

IXFE180N20

Hersteller:

IXYS

Paket:

SOT-227B

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 200V 158A SOT227B

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Mounting Type Chassis Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 12mOhm @ 500mA, 10V
Supplier Device Package SOT-227B
Vgs(th) (Max) @ Id 4V @ 8mA
Drain to Source Voltage (Vdss) 200 V
Series HiPerFET™
Power Dissipation (Max) 500W (Tc)
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 158A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXFE180