HTNFET-T
Honeywell Aerospace
Produkt-Nr.:
HTNFET-T
Hersteller:
Paket:
4-Power Tab
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 55V 4POWER TAB
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 225°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Supplier Device Package | 4-Power Tab |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Drain to Source Voltage (Vdss) | 55 V |
| Series | HTMOS™ |
| Power Dissipation (Max) | 50W (Tj) |
| Package / Case | 4-SIP |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Mfr | Honeywell Aerospace |
| Vgs (Max) | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Package | Bulk |
| Base Product Number | HTNFET |
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