HGTD3N60C3S9A
onsemi
Produkt-Nr.:
HGTD3N60C3S9A
Hersteller:
Paket:
TO-252AA
Charge:
-
Datenblatt:
Beschreibung:
IGBT 600V 6A 33W TO252AA
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Test Condition | 480V, 3A, 82Ohm, 15V |
| Switching Energy | 85µJ (on), 245µJ (off) |
| Current - Collector (Ic) (Max) | 6 A |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Td (on/off) @ 25°C | - |
| Supplier Device Package | TO-252AA |
| Current - Collector Pulsed (Icm) | 24 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 3A |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge | 10.8 nC |
| Power - Max | 33 W |
| Mfr | onsemi |
| Package | Tape & Reel (TR) |
| IGBT Type | - |
| Base Product Number | HGTD3N60 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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